Electronics

Honeywell Defense Electronics DivisionBiblio.com

10.6 um Hg CdTe Photodiode Technology

1979ref. 76193Lexington MA: Honeywell Defense Electronics Division 1979. Presumed First Edition First printing. Spiral bound wraps. Good. 43 sheets printed on one side only plus covers. Cover has wear and soiling. Illustrations. HgCdTe or mercury cadmium telluride also cadmium mercury telluride MCT MerCad Telluride MerCadTel MerCaT or CMT is an alloy of cadmium telluride CdTe and mercury telluride HgTe with a tunable bandgap spanning the shortwave infrared to the very long wave infrared regions. The amount of cadmium Cd in the alloy can be chosen so as to tune the optical absorption of the material to the desired infrared wavelength. CdTe is a semiconductor with a bandgap of approximately 1.5 electronvolts eV at room temperature. HgTe is a semimetal which means that its bandgap energy is zero. Mixing these two substances allows one to obtain any bandgap between 0 and 1.5 eV. I-V characteristic of a photodiode. The linear load lines represent the response of the external circuit. The points of intersection with the curves represent the actual current and voltage for a given bias resistance and illumination. A photodiode is a semiconductor device that converts light into an electrical current. The current is generated when photons are absorbed in the photodiode. Photodiodes may contain optical filters built-in lenses and may have large or small surface areas. Photodiodes usually have a slower response time as their surface area increases. Photodiodes are similar to regular semiconductor diodes except that they may be either exposed to detect vacuum UV or X-rays or packaged with a window or optical fiber connection to allow light to reach the sensitive part of the device. Many diodes designed for use specifically as a photodiode use a PIN junction rather than a p-n junction to increase the speed of response. A photodiode is designed to operate in reverse bias. Honeywell Defense Electronics Division paperback

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